Excellent		0 Reviews
Good		0 Reviews
medium		0 Reviews
Acceptable		0 Reviews
Not Good		0 Reviews

تحميل Cryogenic electronics for Quantum Computing

Engineering 2026-09-27

روابط التحميل

لمشاهدة الكورس مباشر بدون تحميل اضغط هنا

عدد الدروس 70

قسم Engineering

Cryogenic Electronics for Quantum Computing Promo

Lec 01 Principles of Quantum Mechanics

Lec 02 Principles of Quantum Mechanics II

Lec 03 Schrodinger s Wave Equation

Lec 04 Schrodinger s Wave Equation II

Lec 05 Formation of Energy Bands The Kronig–Penney Model K Space Diagram

Lec 06 Electrical Conduction in Solids The Energy Band and the Bond Model Drift Current

Lec 07 DOS I

Lec 08 DOS II

Lec 09 Basic MOSFET Structure symbol and working as a Switch

Lec 10 MOSFET Operation Depletion Accumulation and Inversion

Lec 11 MOSFET I V Characteristics Threshold voltage I V Characteristics Transconductance

Lec 12 MOSFET I V and Threshold Voltage II

Lec 13 Second Order Effects – a Body Effect

Lec 14 Second Order Effects b Channel Length Modulation c Subthreshold Conduction

Lec 15 Introduction to Cryogenics in Electronics

Lec 16 Cryogenic Coolant Fluids used

Lec 17 Transition in Properties of materials with variation in Temperature

Lec 18 Transition in Properties of materials with variation in Temperature II

Lec 19 Semiconductor devices at Room Temperature 300 K

Lec 20 Semiconductor devices at Low Temperature below 150 K and 77K

Lec 21 Change in Bandgap at Low Temperature I

Lec 22 Change in Bandgap at Low Temperature II

Lec 23 Change in Intrinsic Carrier concentration

Lec 24 Lowering in the level of Fermi Energy

Lec 25 Effect of Freeze out on dopant atom concentration

Lec 26 Effect of Freeze out on Dopant Atom Concentration II

Lec 27 Introduction to Modelling of Cryo MOS Device

Lec 28 Device Performance Modelling at Cryogenic Temperatures

Lec 29 Semiconductor Device Equations at Low Temperature

Lec 30 Incomplete Ionization Models

Lec 31 Mobility Models Scattering effect

Lec 32 Change in Threshold Voltage

Lec 33 Change in Threshold Voltage Trap Based Changes

Lec 34 Effect on Mobility

Lec 35 Effect on leakage and saturation current

Lec 36 Kink observed at higher VDS due to Impact Ionization

Lec 37 Subthreshold Swing and Transconductance I

Lec 38 Subthreshold Swing and Transconductance II

Lec 39 Introduction to MOS Capacitance

Lec 40 Traps and Defects at Cryogenic Temperatures

Lec 41 C V Characteristics High Frequency and Low Frequency Capacitance

Lec 42 Characterization Techniques and Cryogenic MOS Capacitance Modeling

Lec 43 Noise Performance and Flicker Noise

Live Session for Cryogenic Electronics for Quantum Computing Aug 20 2025

Lec 44 Cryo Analog to Digital Converter

Lec 45 Cryo Low Noise Amplifiers

Lec 46 Multiplexers and Circulators

Lec 47 Cryo Oscillators

Lec 48 Cryo Power Management Circuits and Sensors and Sensors Interfaces

Lec 49 Introduction to Qubits

Lec 50 Properties of Qubits

Lec 51 Interfacing Quantum Processor with Classical Controllers

Lec 52 Quantum Entanglement and Quantum Communication

Lec 53 Single Qubit System

Lec 54 Extension to Two Qubit systems and Multiplexing DC and I O signal for 4 qubits

Lec 55 Multiplexing DC and I O signal for 4 qubits

Lec 56 Multiplexing techniques based on FDMA TDMA SDMA

Lec 57 Introduction to Quantum Metrology and Quantum Sensing

Lec 58 SPADS and Challenges to Quantum Technology

Lec 59 Qubit readout front end circuits for a Spin qubit b Transmon qubit

Lec 60 Sensing the Qubits Microwave Technique

Lec 61 Characterization and Modelling of 22 nm FDSOI Cryogenic RF CMOS

Lec 62 Modelling of 22 nm FDSOI Cryogenic RF CMOS –Part II

Lec 63 Modelling of 22 nm FDSOI Cryogenic RF CMOS –Part III

Lec 64 Parasitic Capacitance in Nanosheet FETs

Lec 65 Performance Perspective of Gate All Around Double Nanosheet

Lec 66 Nanosheet Part I

Lec 67 Nanosheet Part II

Lec 68 Nanosheet Part III

Engineering
2026-09-27